Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5350181 | Applied Surface Science | 2015 | 5 Pages |
Abstract
Ni dopants typically exist as Ni2+ oxidation state in metal oxides. We report that as Ni is co-doped with P in Ni(P):SnO2, P promotes Ni2+ into Ni3+, which acts as acceptor and coverts n-type SnO2 to p-type conduction. Significant hole concentration (4.5Â ÃÂ 1018Â cmâ3) of p-type Ni(P):SnO2 can be obtained. The chemical state of Ni3+ in Ni(P):SnO2 is verified by ultra-violet and x-ray photoelectron spectroscopy. With the developed p-Ni(P):SnO2, transparent p-Ni(P):SnO2/i-SnO2/n-ITO p-i-n structure was fabricated and characterized: low leakage-current (8.41Â ÃÂ 10â5Â A at â5Â V), turn-on voltage (4.68Â eV), good transmittance (85%), and small ideality-factor (1.73).
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Po-Ming Lee, Yen-Ju Wu, Chih-Yi Hsieh, Ching-Han Liao, Yen-Shuo Liu, Cheng-Yi Liu,