Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5350559 | Applied Surface Science | 2014 | 6 Pages |
Abstract
Mechanisms of PTCDI-C8 adsorption and thin films growth on Si(1Â 1Â 0)-(16Â ÃÂ 2) have been studied using a combination of X-ray photoelectron spectroscopy, scanning tunneling microscopy, and density functional theory. Oxygen atoms of the PTCDI-C8 molecule interact with the substrate increasing substantially the adsorption energy. Adsorbed molecules do not form long-range ordered structures on the surface but local chain-like arrangements. A good agreement between the calculated isosurfaces of electronic charge density and the scanning tunneling microscopy images of the filled electron states of clean and adsorbate-covered surfaces allows to recognize the PTCDI-C8 molecules adsorbed on Si(1Â 1Â 0)-(16Â ÃÂ 2).
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Authors
Katarzyna Lament, Wojciech KamiÅski, Piotr Mazur, Stefan Zuber, Antoni Ciszewski,