Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5350690 | Applied Surface Science | 2017 | 6 Pages |
Abstract
Intermixing of TiO2 with Al2O3 to form TiAlO films on 4H-SiC is expected to simultaneously boost the dielectric constant and achieve sufficient conduction/valence band offsets (CBO/VBO) between dielectrics and 4H-SiC. In this work, a composite TiAlO film rather than TiO2-Al2O3 laminations is deposited on 4H-SiC by plasma enhanced atomic layer deposition (PEALD). X-ray photoelectron spectroscopy (XPS) is performed to systematically analyze the interfacial chemistry and energy band alignment between TiAlO and 4H-SiC. An interfacial layer composed of Ti, Si, O and C forms between TiAlO and 4H-SiC during PEALD process. The VBO and CBO between TiAlO and 4H-SiC are determined to be 1.45Â eV and 1.10Â eV, respectively, which offer competitive barrier heights (>1Â eV) for both electrons and holes and make it suitable for the fabrication of 4H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs).
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Qian Wang, Xinhong Cheng, Li Zheng, Peiyi Ye, Menglu Li, Lingyan Shen, Jingjie Li, Dongliang Zhang, Ziyue Gu, Yuehui Yu,