| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5350741 | Applied Surface Science | 2017 | 26 Pages |
Abstract
A thick (SiO2Â +Â Ge) layer was deposited by magnetron sputtering and after suitable thermal treatment spherical Ge QDs were formed in SiO2 matrix with rather narrow size distribution, as confirmed by GIWAXS and GISAXS analysis. It is shown that the formed surface/interface of the QDs with the matrix was rough with fractal nature. Annealing in N2 atmosphere produced photoluminescence (PL) in the visible part of the spectrum which consists of three contributions. All are attributed to structural defects at or close to the Ge/SiOx interface. Time-resolved PL results support the assumption that the three components are dominant in the observed luminescence.
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Authors
J. DasoviÄ, P. DubÄek, I. PuciÄ, S. Bernstorff, N. RadiÄ, B. Pivac,