Enhanced mobility of Li-doped ZnO thin film transistors fabricated by mist chemical vapor deposition

Mist chemical vapor deposition (mist-CVD)-processed, lithium (Li)-doped ZnO thin film transistors (TFTs) are investigated. Li doping significantly increases the field-effect mobility in TFTs up to ∼100 times greater than that of undoped ZnO. The addition of Li into mist-CVD-grown ZnO semiconductors leads to improved film quality, which results from the enhanced crystallinity and reduced defect states, including oxygen vacancies. Our results suggest that Li doping of ZnO-based oxide semiconductors could serve as an effective strategy for high-performance, mist-CVD-processed oxide TFTs with low-cost and low-temperature fabrication.