Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5351048 | Applied Surface Science | 2017 | 5 Pages |
Abstract
It has been shown that enhanced electric field intensity (0-4.0 kV/cm) has an obvious effect on accelerating atom diffusion in Cu/Ta/Si interconnect stacks at 650 °C. The theoretical deduction proves that diffusion coefficient is accelerated proportional to an acceleration factor (1 + a·αE/0.8)2. The analysis indicates that the accelerating effect is mainly attributed to the perturbation of the electric state of the defects and enhanced vacancy and dislocation densities.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Lei Wang, Isaac Asempah, Song-Tao Dong, Pian-Pian Yin, Lei Jin,