Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5351049 | Applied Surface Science | 2017 | 9 Pages |
Abstract
The effects of pre-growth Sb reconstruction on a GaAs surface on the epitaxial growth of III-Sb (GaSb and InSb) on a (100) GaAs substrate using interfacial misfit array were investigated. All samples exhibited smooth surface with a root mean square (r.m.s.) roughness below 1.5 nm and nearly 100% relaxation. Modeling indicated that the distribution and types of misfit dislocations can be evaluated using a reciprocal space map (RSM) of the x-ray measurements. The interfacial misfit (IMF) arrays in III-Sb/GaAs samples were characterized by RSMs of high-resolution x-ray diffraction (XRD) and transmission electron microscopy (TEM). The RSM results suggest that all samples exhibited highly uniformly distributed misfit dislocations, and pre-growth (2 Ã 8) Sb surface reconstruction promoted the formation of 90° dislocations in an IMF array. Hall measurements of unintentionally doped GaSb and InSb layers also suggested that the highest motilities at both 77 K and 300 K were achieved at the samples grown on GaAs with pre-growth (2 Ã 8) Sb reconstruction.
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Authors
Bo Wen Jia, Kian Hua Tan, Wan Khai Loke, Satrio Wicaksono, Soon Fatt Yoon,