| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5351133 | Applied Surface Science | 2014 | 6 Pages |
Abstract
- AlN films were grown using plasma-enhanced atomic layer deposition.
- The depositions were carried out at 250 °C.
- High-resolution XPS was used to analyze the films at various depths.
- Oxygen impurity was observed before and after exposure to air.
- In-depth analysis of the nature of oxygen impurity is offered.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
P. Motamedi, K. Cadien,