Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5351144 | Applied Surface Science | 2014 | 6 Pages |
Abstract
Atomic-layer-deposited Al2O3 films were grown on ultrathin-body In0.53Ga0.47As substrates for III-V compound-semiconductor-based devices. Interface sulfur (S) passivation was performed with wet processing using ammonium sulfide ((NH4)2S) solution, and dry processing using post-deposition annealing (PDA) under a H2S atmosphere. The PDA under the H2S atmosphere resulted in a lower S concentration at the interface and a thicker interfacial layer than the case with (NH4)2S wet-treatment. The electrical properties of the device, including the interface property estimated through frequency dispersion in capacitance, were better for (NH4)2S wet-treatment than the PDA under a H2S atmosphere. They might be improved, however, by optimizing the process conditions of PDA. The PDA under a H2S atmosphere following (NH4)2S wet-treatment resulted in an increased S concentration at the interface, which improved the electrical properties of the devices.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Hyun Soo Jin, Young Jin Cho, Sang-Moon Lee, Dae Hyun Kim, Dae Woong Kim, Dongsoo Lee, Jong-Bong Park, Jeong Yeon Won, Myoung-Jae Lee, Seong-Ho Cho, Cheol Seong Hwang, Tae Joo Park,