Benzotriazole as a passivating agent during chemical mechanical planarization of Ni-P alloy substrates

With the rapid increase of data storage density on computer hard disk drives (HDDs), the operation distance between read/write head and disk surface has fallen to just a few nanometers. Chemical mechanical planarization (CMP) has been selected as the best process to produce high quality surface finish during the manufacturing of Ni-P alloy substrates for HDD applications. Herein we report, for the first time, the use of benzotriazole (BTA) as a passivating agent in CMP slurries to decrease the surface roughness (Ra). Results show that the average Ra of the polished surfaces is decreased to 0.2 nm in a 5 μm × 5 μm scan area with the adding of 2 mM BTA. X-ray photoelectron spectroscopy (XPS) and electrochemical studies results further prove the interaction between BTA and Ni-P surface and the formation of an effective passivating layer on Cu in CMP slurries containing BTA.