Room temperature deposited p-channel amorphous Cu1−xCrxO2−δ thin film transistors

Transparent p-type amorphous Cu1−xCrxO2−δ thin films were grown on the glass substrate by RF magnetron co-sputtering at room temperature. Structural, optical and electrical properties of these films were studied as a function of chromium content in the film. Composition of Cu1−xCrxO2−δ thin films could be varied by tuning the RF power to Cr sputtering target. Bandgap of as deposited Cu1−xCrxO2−δ thin films varies from 2.8 eV to 2.1 eV as chromium content increases in the film. The bottom gate structured TFTs fabricated using p-type Cu1−xCrxO2−δ operated in enhancement mode with an on-off ratio of 104 and field effect mobility 0.3 cm2 V−1 s−1.