| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5351182 | Applied Surface Science | 2014 | 5 Pages |
Abstract
The electrical and optical properties of amorphous indium zinc tin oxide (a-IZTO) thin films were examined as a function of chemical composition. Effects of Sn/Zn composition ratio and In content on the electrical and optical properties of a-IZTO thin films are discussed. The electron mobility of thin film transistors with higher Sn/Zn composition ratio was dramatically improved due to a shorter zinc-zinc separation distance. The thin film transistor with the composition of In:Zn:Sn = 20:48:32 exhibits a high mobility of 30.6 cm2 Vâ1 sâ1 and a high on-off current ratio of 109.
Related Topics
Physical Sciences and Engineering
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Physical and Theoretical Chemistry
Authors
Yus Rama Denny, Kangil Lee, Soonjoo Seo, Suhk Kun Oh, Hee Jae Kang, Dong Seok Yang, Sung Heo, Jae Gwan Chung, Jae Cheol Lee,