Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5351406 | Applied Surface Science | 2014 | 9 Pages |
Abstract
Based on a combination of RIE nano-texturing and the conventional micro-texturing processes, an improved double-texturing process is reported. This paper explains its successful implementation using low-cost inline-diffusion and non-acidic 'SERIS etch' etch-back technology and elimination of any RIE-related damage removal etching step. This optimised double-textured post-diffused SWS surface does not affect minority carrier lifetime and has WAR of 3.2% after SiNx ARC deposition, which is significantly lower than that of conventional acidic-textured (WAR of 6-7%) 156Â mm2, industrial-grade, p-type multi-Si wafers. SEM micrographs of the double-textured SWS multi-Si surface: (a) magnification: 15000Ã, (b) magnification: 35000Ã. Left: front surface reflectance as a function of wavelength for double and micro-textured multi-Si wafers before and after SiNx ARC deposition.
Related Topics
Physical Sciences and Engineering
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Authors
Prabir Kanti Basu, Sandipan Chakraborty, Ziv Hameiri, Matthew Benjamin Boreland,