Article ID Journal Published Year Pages File Type
5351640 Applied Surface Science 2014 7 Pages PDF
Abstract
Pulse repetition at relatively lower laser fluences (>threshold energy) resulted in the best electrical results in combination with a limited laser induced damage in the silicon crystal. Also, multiple laser annealing resulted in redistribution of the dopant profiles in terms of enhanced junction depth.
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Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
Preview
Analysis of laser doping of silicon using different boron dopant sources
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