| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5351820 | Applied Surface Science | 2014 | 6 Pages |
Abstract
- The influence of two different locations of sputter guns on the morphological and structural properties of Cu-In-Ga precursors and Cu(In,Ga)Se2 (CIGS) thin films was investigated.
- Voids were observed at the CIGS/SLG interface of the CIGS films.
- Ordered vacancy compound (OVC) phase were observed in the CIGS films.
- The metallic precursors deposited with the upright-location sputter gun might be more appropriate to prepare CIGS thin films than those sputtered with the titled-location gun.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
J. Wang, J. Zhu, Y.X. He,