Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5351856 | Applied Surface Science | 2014 | 6 Pages |
Abstract
Thin uranium films were deposited on Si (1Â 1Â 1)-7Â ÃÂ 7 surface by e-beam evaporation. The surface and interface of U/Si (1Â 1Â 1) with different annealing temperatures were studied by scanning tunneling microscopy (STM), low-energy electron diffraction (LEED), reflection high energy electron diffraction (RHEED) and photoemission spectroscopy. The formation of 2D uranium silicide (USi1.67) film was confirmed by the presence of a sharp 1Â ÃÂ 1 LEED pattern, and the surface morphology of this phase displays triangular layered structures. A new superstructure was found for the U-Si system when annealing the interface at 1000Â K. Further annealing of the interface leads to the appearance of large area of Si (1Â 1Â 1)-7Â ÃÂ 7 reconstruction surface with high islands on it.
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Authors
Qiuyun Chen, Wei Feng, Xiegang Zhu, Lizhu Luo, Donghua Xie, Shiyong Tan, Xinchun Lai,