Structural transformations in femtosecond laser-processed n-type 4H-SiC

We present a comprehensive study of morphological modification induced on and below the surface of n-type 4H-SiC by irradiation with femtosecond laser pulses under tight focusing condition. Spectroscopic investigation of local electronic and structural transformations in SiC-micro/nanostructures suggested bond breaking i.e. transformation of crystalline SiC to amorphous silicon (a-Si) and amorphous carbon (a-C). These observations were augmented by investigations applying atomic force microscopy (AFM), micro-photoluminescence (PL) spectroscopy, and high resolution X-ray diffraction (HRXRD). A high-resolution cross-sectional study of laser-modified region with transmission electron microscope (TEM) showed a thin amorphous layer in the vicinity of the geometrical focus with deformations and stacking faults in the sub-surface area. Having considered the existing ablation theories, a complex interplay of fast laser heating followed by melting and rapid re-solidification as well as dynamic relaxation of the laser-induced stresses seems to be responsible for formation of the observed structural changes.