Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5352313 | Applied Surface Science | 2013 | 5 Pages |
Abstract
- Films of Ge nanoparticles in SiO2 matrix were prepared by sputtering and annealing at 600-1000 °C.
- The film surface changes from a particle-like to a smooth one with the annealing temperature increase.
- Raman studies evidence Ge nanocrystals (NCs) in the films annealed at 700 °C.
- At 800 °C annealing, the strong Ge diffusion hinders Ge NCs formation.
- The transition from tunnelling to hopping mechanism by increasing the annealing temperature from 700 to 800 °C was evidenced and discussed.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Ionel Stavarache, Ana-Maria Lepadatu, Toma Stoica, Magdalena Lidia Ciurea,