| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5352396 | Applied Surface Science | 2013 | 6 Pages |
Abstract
- Arc discharge lithography produced by a metal tip was used to modify Zn3N2 thin films.
- Properties of resultant layers were examined by SEM, IBA and resistivity measurements.
- At higher voltage discharges, IBA confirmed Zn3N2 was transformed into ZnO:N crystals.
- Dimensions of submicron ZnO:N crystals was similar than initial Zn3N2 grain domains.
- Different stoichiometry between ZnO and Zn3N2 formed Zn droplets along the scan edges.
Related Topics
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Authors
C. GarcÃa Núñez, J. Jiménez-Trillo, M. GarcÃa Vélez, J. Piqueras, J.L. Pau, C. Coya, A.L. Álvarez,