| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5352867 | Applied Surface Science | 2013 | 4 Pages |
Abstract
⺠We examined Si surface layers modified by plasma immersion H+ implantation (PII). ⺠The PII-induced changes were studied by ellipsometry in the VIS range. ⺠PII creates a-Si inclusions, defects and tensile stress in a thin Si surface layer. ⺠The PII effect on the Si layer parameters enhances with increasing the H+ fluence.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
A. Szekeres, S. Alexandrova, P. Petrik, B. Fodor, S. Bakalova,