| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5352868 | Applied Surface Science | 2013 | 4 Pages |
Abstract
⺠Films of n-type GaN with different doping levels (E18-E20) were grown by ammonia MBE technique. ⺠Noticeable changing of energy position and slope (as broken line) of absorption edge were first revealed from ellipsometric spectra (ES). ⺠These features of absorption edge are impossible to find from transmittance spectra. ⺠Authors propose to predict electrical properties from ES using preliminary found correlation dependence between optical and electrical properties. ⺠It will be provided fast monitoring of expensive structures.
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Authors
S.N. Svitasheva, A.M. Gilinsky,