| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5352870 | Applied Surface Science | 2013 | 14 Pages |
Abstract
⺠The effect of photo-induced enhancement of deep trap photoluminescence (PL) of quantum dots (QDs) is found. ⺠The effect is observed in the CdSe QDs embedded in polyvinyl alcohol (PVA) film. ⺠The effect is caused by the increase of the activation energy of the PL thermal quenching. ⺠The effect is ascribed to change of QD surface defect passivation caused by photochemical transformations at the QD/PVA interface.
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Authors
L. Borkovska, N. Korsunska, T. Stara, O. Gudymenko, Ye. Venger, O. Stroyuk, O. Raevska, T. Kryshtab,