| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5352871 | Applied Surface Science | 2013 | 6 Pages |
Abstract
⺠Comparison of optical and X-ray results on GaInZnO samples with Ga < 1 at%. ⺠Elemental composition determined by reference-free X-ray fluorescence. ⺠Correlation of the Raman-active dopant mode from Ga at 580 cmâ1 with the Ga concentration. ⺠Surface nanoroughness taken into account for determination of accurate optical properties. ⺠Both the peak amplitude and the gap energy of ϵ2 increase as a result of annealing and decrease with increasing Ga content.
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Chemistry
Physical and Theoretical Chemistry
Authors
P. Petrik, B. Pollakowski, S. Zakel, T. Gumprecht, B. Beckhoff, M. Lemberger, Z. Labadi, Z. Baji, M. Jank, A. Nutsch,