Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5352959 | Applied Surface Science | 2013 | 9 Pages |
Abstract
Sol-gel Mn(II) doped antimony tin oxide films were developed with precursor of atomic ratio range, Sn:Sb:Mn = 68-72:23-25:9-3. The X-ray diffraction patterns depict tetragonal cassiterite phase of SnO2. Transmission electron microscopy images suggest the nanostructured form of the doped materials. The increase in crystallite size with Mn(II) concentration is reflected by the larger band gap values (4.61-4.73 eV) arising from the excitonic transitions which also respond to PL emissions. Hall effect measurements show that the carrier concentration increases but mobility decreases for Mn(II) doping. Room temperature ferromagnetism with different saturation magnetic moments (Ms) has been observed for all dopant concentrations, 3-9 at%.
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Authors
Laxmikanta Dua, Prasanta K. Biswas,