| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5352972 | Applied Surface Science | 2013 | 7 Pages |
Abstract
Zr-N thin films were deposited on Si (1Â 0Â 0) substrate by reactive sputtering using a pulsed DC magnetron sputtering technique. It was found that films deposited at 773Â K and 1Â sccm of nitrogen flow rate show a single phase with face centred cubic-ZrN. Raman analysis also confirmed the formation of ZrN phase in the films. The films deposited at nitrogen flow rate greater than 1Â sccm show ZrN along with orthorhombic-Zr3N4. The chemical bonding characteristics of the films were analyzed by X-ray photoelectron spectroscopy. High resolution transmission electron microscopy also gave evidence for fcc-ZrN and o-Zr3N4 phase and revealed equiaxed grains in these films. In addition, hardness and Young's modulus of the films measured as a function of nitrogen flow rate is discussed qualitatively in relation to resistance to plastic deformation offered by these films.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Akash Singh, P. Kuppusami, Shabana Khan, C. Sudha, R. Thirumurugesan, R. Ramaseshan, R. Divakar, E. Mohandas, S. Dash,