Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5352988 | Applied Surface Science | 2013 | 4 Pages |
Abstract
N-type bismuth telluride (Bi2Te3) thermoelectric thin films were deposited by co-sputtering simple substance Te and Bi targets. The deposited films were annealed under various temperatures. The composition ratio, micro-structure and thermoelectric properties of the prepared films were systematically investigated by energy dispersive spectrometer, X-ray diffraction, four-probe method and Seebeck coefficient measurement system. When the annealing temperature is 400 °C, the stoichiometric N-type Bi2Te3 film is achieved, which has a maximum thermoelectric power factor of 0.821 Ã 10â3 W mâ1 Kâ2. Furthermore, the dependence of Seebeck coefficient, electrical conductivity and power factor of the stoichiometric N-type Bi2Te3 film annealed at film 400 °C on the applied temperature ranging from 25 °C to 315 °C was investigated. The results show that a highest power factor of 3.288 Ã 10â3 W mâ1 Kâ2 is obtained at the applied temperature of 275 °C. The structural and thermoelectric properties of the deposited bismuth telluride thin films are greatly improved by annealing and the Seebeck coefficient, electrical conductivity and power factor increase with the applied temperature rising, which are helpful and could be guidance for preparing the high-performance thin film thermoelectric materials for thermoelectric application.
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Authors
Cai Zhao-kun, Fan Ping, Zheng Zhuang-hao, Liu Peng-juan, Chen Tian-bao, Cai Xing-min, Luo Jing-ting, Liang Guang-xing, Zhang Dong-ping,