| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5353223 | Applied Surface Science | 2016 | 7 Pages |
Abstract
- The growth mechanism of defects in GDP films was studied upon plasma diagnosis.
- Increasing rf power enhanced the etching effects of smaller-mass species.
- The “void” defect was caused by high energy hydrocarbons bombardment on the surface.
- The surface roughness was only 12.76Â nm, and no “void” defect was observed at 30Â W.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Ling Zhang, Xiaoshan He, Guo Chen, Tao Wang, Yongjian Tang, Zhibing He,