| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5353279 | Applied Surface Science | 2013 | 5 Pages |
Abstract
⺠Numerical and experimental study of single pulse laser annealing of a-Si using standard DPSS (diode pumped solid state) nanosecond laser sources. ⺠Experimental Raman measurements and determination of crystalline fraction. ⺠COMSOL numerical model of pulse laser crystallization of amorphous silicon. ⺠Experimental crystalline fraction and numerical results from simulation show reasonable agreement for UV-355 nm and VIS-532 nm wavelengths. ⺠The numerical model predicts the fluence range within which the annealing process should operate.
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Authors
O. GarcÃa, J.J. GarcÃa-Ballesteros, David Munoz-Martin, S. Núñez-Sánchez, M. Morales, J. Carabe, I. Torres, J.J. GandÃa, C. Molpeceres,