Influence of oxygen pressure on the structural, electrical and optical properties of Nb-doped ZnO thin films prepared by pulsed laser deposition

Nb-doped zinc oxide (NZO) transparent conductive thin films with highly (0 0 2)-preferred orientation were deposited on glass substrates by pulsed laser deposition method in oxygen ambience under different oxygen pressures. The as-deposited films were characterized by X-ray diffraction (XRD), Field emission-scanning electron microscopy (FE-SEM), electrical and optical characterization techniques. It was found that a desirable amount of oxygen can reduce the related defect scattering and enhance the carrier mobility. The resistivity and average optical transmittance of the NZO thin films are of 10−4 Ω cm and over 88%, respectively. The lowest electrical resistivity of the film is found to be about 4.37 × 10−4 Ω cm. In addition, the influence of oxygen pressure on optical properties in NZO thin films was systematically studied as well.