Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5353359 | Applied Surface Science | 2014 | 19 Pages |
Abstract
High resolution soft x-ray photoemission spectroscopy (SXPS) have been used to study the high temperature thermal stability of ultra-thin atomic layer deposited (ALD) HfO2 layers (â¼1 nm) on sulphur passivated and hydrofluoric acid (HF) treated germanium surfaces. The interfacial oxides which are detected for both surface preparations following HfO2 deposition can be effectively removed by annealing upto 700 °C without any evidence of chemical interaction at the HfO2/Ge interface. The estimated valence and conduction band offsets for the HfO2/Ge abrupt interface indicated that effective barriers exist to inhibit carrier injection.
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Authors
Rajesh Kumar Chellappan, Durga Rao Gajula, David McNeill, Greg Hughes,