| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5353453 | Applied Surface Science | 2016 | 7 Pages |
Abstract
- Photocatalytic oxidation technology was introduced to GaN CMP for the first time and proves to be more efficient than before.
- XPS analysis reveals the planarization process by different N-type semiconductor particles.
- Analyzing the effect of pH on photocatalytic oxidation in GaN CMP.
- Proposing the photocatalytic oxidation model to reveal the removal mechanism.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Jie Wang, Tongqing Wang, Guoshun Pan, Xinchun Lu,