| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5353475 | Applied Surface Science | 2016 | 5 Pages |
Abstract
- We grew niobium on topological insulator at different substrate temperatures.
- Local density of states is modified by deposited Nb islands.
- We found a downward shift of the Dirac point, since niobium acts as a donor.
- Nb grew in layer-by-layer growth mode up to an annealing temperature of 450 °C.
- We applied a new cleaving method allowing for sample heating of flux-grown TI.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Philipp Meixner, Seong Joon Lim, Joonbum Park, Jun Sung Kim, Saskia F. Fischer, Jungpil Seo, Young Kuk,