| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5353480 | Applied Surface Science | 2016 | 5 Pages |
Abstract
- Surface-diffusion enhanced Ga incorporation in ZnO nanowires grown on GaN substrate.
- Uniform distributions of Ga incorporation along ZnO nanowires.
- Diffusion barrier for Ga atoms decreased with the assistance of an oxygen vacancy.
- Two orders of magnitude increase in the surface diffusion coefficient caused by oxygen vacancies on ZnO nanowire sidewalls.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Jianyu Wang, Huabin Sun, Yun Sheng, Lijun Yang, Fan Gao, Yao Yin, Zheng Hu, Qin Wan, Rong Zhang, Youdou Zheng, Yi Shi,