| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5353481 | Applied Surface Science | 2016 | 8 Pages |
Abstract
- Positive charging of high purity amorphous SiO2 achieved by electron irradiation in a specially equipped scanning electron microscope.
- Quantity of detrapped holes evaluated via measurements of induced and secondary electron currents.
- Study of isothermal detrapping for different temperatures (300-663Â K).
- Analysis of the hole detrapping via a first order kinetics.
- Evaluation of the hole detrapping parameters (activation energy and frequency factor).
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
K. Said, G. Moya, A. Si Ahmed, G. Damamme, A. Kallel,