Article ID Journal Published Year Pages File Type
5353583 Applied Surface Science 2014 6 Pages PDF
Abstract
Graphene was grown on semiinsulating silicon carbide at 1800 °C and atmospheric argon pressure. The all carbon T- and Y-shape three terminal junction devices were fabricated using electron beam lithography. All devices featured the negative rectification effect. The exact properties of the devices like the curvature of the output voltage response can be tuned by changing the branch width in the T- and Y-shape devices. Beside the rectification a switching behavior is demonstrated with the same three terminal junctions.
Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
Authors
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