Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5353679 | Applied Surface Science | 2016 | 5 Pages |
Abstract
Few-layer MoS2 prepared by the chemical vapor deposition method is deposited on SiO2 samples with/without sulfide treatment in order to experimentally study the mechanism of conduction-type conversion in MoS2. The MoS2 thin film deposited on a SiO2 substrate with sulfide treatment shows n-type behavior, whereas the MoS2 thin film deposited on a SiO2 substrate without sulfide treatment exhibits p-type behavior. Experimental identification confirms that n-type conversion is due to a combined effect of the broken SiO bonds and the formation of SiS bonds at the SiO2 surface that results in the removal of oxygen dangling bonds and a change in the MoS2SiO2 interaction.
Related Topics
Physical Sciences and Engineering
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Physical and Theoretical Chemistry
Authors
Yow-Jon Lin, Ting-Hong Su,