| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5353816 | Applied Surface Science | 2013 | 5 Pages |
Abstract
⸠Silicon 1s X-ray absorption spectra (XAS) are sensitive to strain in SiGe alloys. ⸠Strain sensitivity arises from XAS linear dichroism differences. ⸠We demonstrate a quantitative relationship between strain and spectra.
Related Topics
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Chemistry
Physical and Theoretical Chemistry
Authors
W. Cao, M. Masnadi, S. Eger, M. Martinson, Q.-F. Xiao, Y.-F. Hu, J.-M. Baribeau, J.C. Woicik, A.P. Hitchcock, S.G. Urquhart,