| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5353824 | Applied Surface Science | 2013 | 6 Pages |
Abstract
⸠InxGa1âxN films were prepared by radio-frequency magnetron sputtering using an In-Ga alloy target. ⸠Grazing incidence X-ray diffraction peaks corresponding to wurtzite structure were observed. ⸠XPS and SIMS analysis indicates that the entire films have oxide phases. ⸠The optical transmittance spectra of the as-grown films show interference fringe patterns. ⸠Oxygen impurities formed amorphous oxide phases embedded in InxGa1âxN matrix.
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Physical Sciences and Engineering
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Physical and Theoretical Chemistry
Authors
J. Wang, X.J. Shi, J. Zhu,