| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5353858 | Applied Surface Science | 2013 | 9 Pages |
Abstract
⸠ZnO:Ga (GZO) films are deposited on glass by steered cathodic arc plasma evaporation. ⸠GZO films are grown at a high growth rate (220 nm/min) and low temperature (120 °C). ⸠Films with low strain show low resistivity and high transparency. ⸠Droplet size is reduced when a high-melting-point GZO ceramic target is adopted. ⸠Metal-like conductivity indicates GZO films became degenerated semiconductors.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Chih-Hao Liang, Wei-Lin Wang, Weng-Sing Hwang,