Article ID Journal Published Year Pages File Type
5353892 Applied Surface Science 2013 5 Pages PDF
Abstract
N-doped TiO2 film was deposited by RF reactive magnetron sputtering in a mixture gas of N2, O2 and Ar. The experimental results show that the crystal structure is anatase phase, and the concentration of substitutional nitrogen is 4.91 at.% which leads to a narrow optical band gap of 2.65 eV. The H2 production rate of the N-doped TiO2 film is about 601 μmol g−1 h−1, far higher than that of the undoped TiO2 film and even about 50 times higher than that of dispersive P25 powder.
Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
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