Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5353943 | Applied Surface Science | 2013 | 5 Pages |
Abstract
Ultrathin La2Hf2O7 (LHO) high-k gate dielectric films (â¼3.4 nm) have been epitaxially grown on Si (0 0 1) substrates through a pulsed laser deposition system. The epitaxial growth characteristics, composition, interface with Si, optical band gap, and electrical properties of the ultrathin LHO films have been investigated by in situ reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), ultraviolet-visible diffuse reflectance spectroscopy (UV-vis DRS) and transmittance spectroscopy, as well as semiconductor characterization analysis. Results show that ultrathin LHO film grown at 800 °C shows a good crystallinity and no obvious interfacial layer forms. La is deficient and oxygen is slightly excessive in LHO film. The epitaxial LHO film has a band gap of â¼5.7 eV. The gate leakage current density Jg of the ultrathin epitaxial LHO film follows the space-charge limited conduction mechanism and Jg is â¼0.3 A/cm2 at a gate voltage of 1 V. Additionally, a suitable permittivity â¼Â 16.7, a small hysteresis â¼Â 30 mV and a low capacitance equivalent thickness â¼Â 0.79 nm have been obtained.
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Authors
Yu-Hua Xiong, Hai-Ling Tu, Jun Du, Feng Wei, Xin-Qiang Zhang, Meng-Meng Yang, Hong-Bin Zhao, Da-Peng Chen, Wen-Wu Wang,