| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5354002 | Applied Surface Science | 2013 | 6 Pages |
Abstract
⺠Low-frequency inductively coupled SiH4 + N2 + H2 plasma is innovatively employed to deposit silicon nitride thin film. ⺠The deposition temperature is very low (100 °C) and the deposition rate is competitive with that of PECVD. ⺠The surface recombination velocity in n-type Si (2-3 Ω cm) is reduced to 36 cm/s without post-deposition annealing. ⺠The chemical compositions and refractive index of SiN can be modulated by altering the gas flow rate ratio of N2/SiH4.
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Authors
H.P. Zhou, D.Y. Wei, L.X. Xu, Y.N. Guo, S.Q. Xiao, S.Y. Huang, S. Xu,