Article ID Journal Published Year Pages File Type
5354028 Applied Surface Science 2013 5 Pages PDF
Abstract
► Secondary phase exist in the RF sputtered CIGS films as it deposited at 150 °C and 500 °C. ► CIGS films deposited beyond 350 °C show (1 1 2) prefer orientation. ► Eg of the CIGS films increased with the increase of substrate temperature. ► Conductivity of the films is affected by “variable range hopping” mechanism.
Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
Authors
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