A very dark-and-conductive electrode based on Mo/MoOx/ITO structure

A dark and conductive electrode based on Mo/MoOx/ITO structure with low resistivity of 1.93 × 10−4 Ω/cm was fabricated by magnetron sputtering. The demonstrated dark electrode exhibits a low reflectance of 2.4-12.9% within the visible spectral range and average luminous reflectance of 3.3%. To improve the conductivity, pure Mo was first sputtered, followed by depositing a dark and conductive MoOx by introducing O2 flow during Mo sputtering. In order to further reduce the reflectance and set the lowest reflectance at the wavelength of 550 nm, which is most sensitive to human eyes, an ITO phase changing layer was introduced on top of the MoOx. The demonstrated dark and conductive electrode can serve as bottom contact and can potentially replace the circular polarizer for high contrast top-emitting organic light-emitting diodes.