Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5354187 | Applied Surface Science | 2017 | 18 Pages |
Abstract
One of the most used dielectric films for amorphous indium zinc oxide (IZO) based thin films transistor is HfO2. The estimation of the valence band discontinuity (ÎEV) of HfO2/IZO heterostructure grown using the pulsed laser deposition technique, with In/(In + Zn) = 0.79, was obtained from X-ray photoelectron spectroscopy (XPS) measurements. The binding energies of Hf 4d5, Zn 2p3 and In 3d5 core levels and valence band maxima were measured for thick pure films and for a very thin HfO2 film deposited on a thick IZO film. A value of ÎEV = 1.75 ± 0.05 eV was estimated for the heterostructure. Taking into account the measured HfO2 and IZO optical bandgap values of 5.50 eV and 3.10 eV, respectively, a conduction band offset ÎEC = 0.65 ± 0.05 eV in HfO2/IZO heterostructure was then obtained.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
D. Craciun, V. Craciun,