| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5354312 | Applied Surface Science | 2013 | 8 Pages |
Abstract
- Using W doped In2O3 (IWO) as interface layer, IWO/ZnO films were prepared.
- IWO/ZnO films show close to 50Â cm2Â VÂ sâ1 high Hall mobility.
- IWO/ZnO films indicate 80% high transparency in 400-2000Â nm (including glass).
- IWO/ZnO films show high haze factor and root-mean square roughness.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Bao-chen Jiao, Xiao-dan Zhang, Chang-chun Wei, Qian Huang, Xin-liang Chen, Ying Zhao,