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Reduced impurities and improved electrical properties of atomic-layer-deposited HfO2 film grown at a low temperature (100 °C) by Al2O3 incorporation

Article ID Journal Published Year Pages File Type
5354572 Applied Surface Science 2016 5 Pages PDF
Keywords
Al2O3Low temperatureDopingAtomic layer depositionImpurity
Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
Preview
Reduced impurities and improved electrical properties of atomic-layer-deposited HfO2 film grown at a low temperature (100 °C) by Al2O3 incorporation
Authors
Tae Joo Park, Youngchol Byun, Robert M. Wallace, Jiyoung Kim,
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Journal
Applied Surface Science
Journal: Applied Surface Science
Related Categories
Al2O3
Low temperature
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Atomic layer deposition
Impurity
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