| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5354725 | Applied Surface Science | 2012 | 4 Pages |
Abstract
⺠An initiating study on the effect of Ga doping on the optoelectronic and thermoelectric properties of β-PbS2 thin films. ⺠The films were characterized by XRD, XPS, SEM, AFM. ⺠Higher bandgap observed for Ga doped β-PbS2 film compared to β-PbS2 film. ⺠Thermopower measurements yielded EF value and the scattering mechanisms in the film.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
R. Geethu, Rajani Jacob, T. Shripathi, G.S. Okram, V. Ganesan, Shilpa Tripathi, Anees Fatima, P.V. Sreenivasan, K.S. Urmila, B. Pradeep, Rachel Reena Philip,