| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5354753 | Applied Surface Science | 2012 | 4 Pages |
Abstract
⺠Yellow luminescence in N-face n-type GaN was characterized. ⺠Outstanding increase of yellow luminescence in N-face GaN was observed after KOH etching. ⺠Correlation between the intensity of the YL and the concentration of Ga vacancies at the surface of KOH-etched n-face GaN was derived. ⺠Direct evidence shows that the yellow luminescence in n-type GaN is related to the Ga vacancies.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Huayong Xu, Xiaobo Hu, Xiangang Xu, Yan Shen, Shuang Qu, Chengxin Wang, Shuqiang Li,