| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5354768 | Applied Surface Science | 2012 | 6 Pages |
Abstract
⺠AgInSe2 with tetragonal body structure was successfully electrodeposited on TiO2/ITO. ⺠The prepared AgInSe2 film exhibits n-type semiconductor behavior with two band gap energies around 1.27-1.80 eV. ⺠The electrodeposited time of 45 min results in the highest photocurrent, fill factor, and solar to electricity conversion efficiency of the AgInSe2-based semiconductor-sensitized solar cells. ⺠The AgInse2 film with an electrodeposited time of 45 min displays the longest electron lifetime and slowest open circuit voltage decay rate.
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Authors
Lung-Chuan Chen, Yi-Ching Ho, Ru-Yuan Yang, Jean-Hong Chen, Chao-Ming Huang,